O menu

MOCVD 6N CVD SiC Coated Graphite Carrier for Epitaxy

Inventário:
SKU: 3591724513
Modelo: CVD-01

{{ variable.name }}

{{ value.name }}

CVD SiC Coated Graphite Carrier for MOCVD Epitaxy

This CVD SiC coated graphite carrier is designed for MOCVD and epitaxy processes. With 6N purity (99.99995%), 100um typical coating, and FCC beta-phase structure, it ensures high thermal uniformity and corrosion resistance. Ideal for wafer susceptors and trays.

Key Selling Points

  • Ultra-high purity: 99.99995% (6N) with total ash ≤5 ppm minimizes contamination for epitaxial quality.
  • Hard coating: 2500 Vickers (40 GPa) resists plasma bombardment and wear, extending component life.
  • Stable crystal structure: FCC beta-phase (111) ensures uniform thermal performance.
  • Proven in mass production: 500 pcs/month to Asia-Pacific customer, with consistent epitaxial results.
  • Reduced downtime: Edge ring replacement frequency cut by 20% in continuous high-temp operation.

Technical Specifications

ParameterValue
ModelCVD-01
Coating Thickness100 μm typical (range 50-150 μm)
Purity Level99.99995% (6N), total ash ≤5 ppm
Coating Hardness2500 Vickers (40 GPa)
Crystal StructureFCC beta-phase polycrystal, (111) oriented
MaterialCVD SiC coated graphite
ApplicationSemiconductor epitaxy / RTP process

Models and Options

Standard model CVD-01. Customization available for size, pocket configuration, and coating thickness within 50-150 μm.

Materials and Structure

High-purity graphite substrate with dense CVD SiC coating. The FCC beta-phase structure provides excellent adhesion and thermal shock resistance.

Applications

Primary applications include MOCVD, epitaxial reactors, and rapid thermal processing (RTP) systems. Used for wafer carriers, susceptors, and trays requiring high temperature stability.

Customization

We offer custom sizes, pocket designs, and coating thicknesses to match your reactor. Contact us for specifications.

Case Study

Asia-Pacific Customer: 500 pcs/month for epitaxy process. Over 2 years continuous high-temperature operation. Achieved stable mass production with consistent epitaxial layer quality, and reduced edge ring replacement frequency by 20%.

FAQ

Q: What is the typical lead time?
Please contact us for current lead time.
Q: Can I get samples?
Yes, MOQ is 1 unit.
Q: How is the coating thickness controlled?
We control within 50-150 μm, typical 100 μm.
Q: What purity level is guaranteed?
6N (99.99995%) with total ash ≤5 ppm.
Q: Does the coating peel under thermal cycling?
No, our coating is designed to withstand rapid thermal cycling without peeling.
Q: What payment terms are available?
New customers: 100% T/T in advance; long-term customers: 70% T/T advance, 30% before shipment.
Q: Do you provide pre-shipment testing?
Yes, each order includes pre-shipment test.

Inquiry Information

Company: Semicera (Ningbo Miami Advanced Material Technology Co., LTD)

Contact: Frank | Email: sales05@semi-cera.com | Tel/WhatsApp: +86 15957878134

Website: www.semi-cera.com

CVD SiC coated graphite shower head for semiconductor epitaxy
Image: CVD-SiC-Coated-Graphite-Shower-Head.jpg