Product Summary
Our SiC furnace tube is engineered for demanding semiconductor processes, including LPCVD and high-temperature oxidation. Made from CVD SiC coating on SiSiC substrate, it offers exceptional thermal conductivity (20-30 W/m.K at 1200°C) and is fully gas-tight under vacuum. With maximum length up to 3000 mm and excellent wall thickness uniformity (±0.2 mm), it ensures consistent process results.
Key Selling Points
- High-density CVD SiC coating ensures excellent thermal shock resistance, enabling stable mass production in continuous high-temperature processes (source: case US).
- Ultra-low particle generation enhances wafer yield by 2.5% in epitaxy applications (source: case Japan).
- Gas-tight under vacuum prevents gas leakage, critical for high-purity processes.
- Customizable length up to 3000 mm meets various furnace sizes.
Technical Specifications
| Parameter | Value |
|---|
| Maximum Length | Up to 3000 mm |
| Wall Thickness Uniformity | ± 0.2 mm |
| Gas Tightness | Impermeable to gases under vacuum |
| Thermal Conductivity | 20-30 W/m.K at 1200°C |
Models and Options
Standard model: SiC-02. Custom lengths and diameters available upon request.
Materials and Structure
Composed of CVD SiC coating on SiSiC (silicon infiltrated silicon carbide) substrate, providing high thermal conductivity and structural integrity.
Applications
Designed for oxidation and diffusion processes in semiconductor fabs. Compatible with LPCVD and diffusion systems for 4-6 inch or larger wafer lines. Suitable for corrosive gas environments (DCS/TCS).
Customization
Custom lengths, diameters, and end configurations available. Our engineering team works with you to match your specific furnace specifications.
Case Study
North America Market: 900 units/month supplied for epitaxy process, operating over 2 years at high temperature. Achieved stable mass production with consistent epitaxial uniformity, reducing equipment maintenance downtime by 15%.
Germany (Europe): 10,000 units/year for high-quality SiC crystal growth. Demonstrated zero outgassing and stable performance under 2000°C operations.
FAQ
What is the maximum length available for the SiC furnace tube?
Up to 3000 mm.
Can this tube be used in LPCVD processes?
Yes, it is designed for LPCVD and high-temperature oxidation processes.
What is the wall thickness uniformity?
±0.2 mm.
Is the tube gas-tight under vacuum?
Yes, it is impermeable to gases under vacuum conditions.
What is the thermal conductivity at high temperatures?
20-30 W/m.K at 1200°C.
Do you offer custom sizes?
Yes, custom lengths and diameters are available on request.
What are your quality certifications?
ISO9001, ISO14001, ISO45001 certified.
Inquiry Information
Contact us for pricing and delivery. Contact: Frank, Email: sales05@semi-cera.com, Tel: +86 15957878134.
