{{ variable.name }}
URL slug: sic-wafer-boat-plasma-resistance
This SiC wafer boat is specifically designed for epitaxy processes involving aggressive fluorine/chlorine plasma. The high-density CVD coating provides outstanding resistance to plasma bombardment, ensuring no coating peeling under rapid thermal cycling.
| Parameter | Value |
|---|---|
| Material Substrate | SiSiC or RSiC |
| Coating | High-density CVD SiC |
| Max Working Temp | Up to 1600°C |
| Plasma Resistance | Outstanding to F/Cl |
| Thermal Shock | Excellent (1000°C to RT) |
Model: SiC-01. Options: substrate type (SiSiC/RSiC), custom size, coating thickness.
High-density CVD SiC coating on SiSiC/RSiC substrate. Structure robust enough for high-load batch processing.
Epitaxy processes, especially those involving plasma etching or cleaning steps.
Custom dimensions and coating specifications available.
In South Korea, a customer used 500 units per month for epitaxy. Achieved stable mass production with consistent epitaxial layer quality, reduced edge ring replacement frequency by 20%.
A: High-density CVD coating provides a tough barrier against F/Cl plasma.
A: No, zero coating peeling under rapid thermal cycling.
A: Both SiSiC and RSiC are available.
A: Up to 1600°C.
A: Yes, it is suitable for diffusion and oxidation as well.
A: 1 unit.
Contact: Frank, sales05@semi-cera.com, +86 15957878134. MOQ: 1 unit. Delivery terms and payment as per company policy.
Image filename: sic-wafer-boat-plasma-resistance.png. Alt text: SiC wafer boat with plasma resistance for epitaxy.
